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| BCW30 SMALL SIGNAL PNP TRANSISTORS Type BCW 30 s Marking C2 s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V CBO V EBO IC I CM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Collector-Base Voltage (IE = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value -32 -32 -32 -5 -0.1 -0.2 300 -65 to 150 150 Unit V V V V A A mW o o C C 1/4 October 1997 BCW30 THERMAL DATA R t hj- amb * Thermal Resistance Junction-Ambient Max 420 o C/W * Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = -30 V V CB = -30 V I C = -10 A T j = 100 C -32 o Min. Typ . Max. -100 -10 Un it nA A V V (BR)CES Collector-Emitter Breakdown Voltage (V BE = 0) V ( BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V ( BR)CBO Collector-Base Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter O n Voltage DC Current G ain Transition F requency Collector Base Capacitance Noise Figure I C = -2 mA -32 V I C = -10 A -32 V I C = -10 A -5 V V CE(sat ) V BE(s at) V BE(on) h FE fT C CB NF I C = -10 mA I C = -50 mA I C = -10 mA I C = -50 mA I C = -2 mA I C = -10 A I C = -2 mA IE = 0 IB = -0.5 mA IB = -2.5 mA IB = -0.5 mA IB = -2.5 mA VCE = -5 V V CE = -5 V V CE = -5 V f = 1MHz f = 1KHz -0.6 -0.3 -0.18 -0.72 -0.81 -0.75 150 215 150 7 10 500 V V V V V I C = -10 mA V CE = -5 V f = 100 MHz VCB = -10 V MHz dB dB I C = -0.2mA f = 200 Hz V CE = -5 V R g = 2K Pulsed: Pulse duration = 300 s, duty cycle 2 % 2/4 BCW30 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 BCW30 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4 |
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